2007-04-20 1 BCV26, bcv46 1 2 3 pnp silicon darlington transistors ? for general af applications ? high collector current ? high current gain ? complementary types: bcv27, bcv47 (npn) ? pb-free (rohs compliant) package 1) ? qualified according aec q101 type marking pin configuration package BCV26 bcv46 fds fes 1=b 1=b 2=e 2=e 3=c 3=c sot23 sot23 maximum ratings parameter symbol value unit collector-emitter voltage BCV26 bcv46 v ceo 30 60 v collector-base voltage BCV26 bcv46 v cbo 40 80 emitter-base voltage v ebo 10 collector current i c 500 ma peak collector current i cm 800 base current i b 100 peak base current i bm 200 total power dissipation- t s 74 c p tot 360 mw junction temperature t j 150 c storage temperature t stg -65 ... 150 1 pb-containing package may be available upon special request
2007-04-20 2 BCV26, bcv46 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 210 k/w 1 for calculation of r thja please refer to application note thermal resistance
2007-04-20 3 BCV26, bcv46 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 , BCV26 i c = 10 ma, i b = 0 , bcv46 v (br)ceo 30 60 - - - - v collector-base breakdown voltage i c = 100 a, i e = 0 , BCV26 i c = 100 a, i e = 0 , bcv46 v (br)cbo 40 80 - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 10 - - collector-base cutoff current v cb = 30 , i e = 0 , BCV26 v cb = 60 , i e = 0 , bcv46 v cb = 30 , i e = 0 , t a = 150 c, BCV26 v cb = 60 , i e = 0 , t a = 150 c, bcv46 i cbo - - - - - - - - 0.1 0.1 10 10 a emitter-base cutoff current v eb = 4 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 100 a, v ce = 1 v, BCV26 i c = 100 a, v ce = 1 v, bcv46 i c = 10 ma, v ce = 5 v, BCV26 i c = 10 ma, v ce = 5 v, bcv46 i c = 100 ma, v ce = 5 v, BCV26 i c = 100 ma, v ce = 5 v, bcv46 i c = 0.5 a, v ce = 5 v, BCV26 i c = 0.5 a, v ce = 5 v, bcv46 h fe 4000 2000 10000 4000 20000 10000 4000 2000 - - - - - - - - - - - - - - - - - collector-emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v cesat - - 1 v base emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v besat - - 1.5 1 pulse test: t < 300s; d < 2%
2007-04-20 4 BCV26, bcv46 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz f t - 200 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 4.5 - pf
2007-04-20 5 BCV26, bcv46 dc current gain h fe = ? ( i c ) v ce = 5 v 10 ehp00298 bcv 26/46 -1 3 10 ma 3 10 6 10 5 5 10 0 10 1 10 4 c fe h 2 10 5 10 ?c 125 5 25 ?c -55 ?c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 1000 0 10 ehp00296 bcv 26/46 cesat v 1.5 0 3 10 c ma 0.5 1.0 1 10 2 10 ?c v 5 5 150 25 ?c -50 ?c base-emitter saturation voltage i c = ? ( v besat ), h fe = 1000 0 10 ehp00295 bcv 26/46 besat v 3.0 0 3 10 c ma 1.0 2.0 1 10 2 10 ?c v 5 5 150 25 ?c -50 ?c collector cutoff current i cbo = ? ( t a ) v cb = v cemax 0 10 ehp00297 bcv 26/46 a t 150 0 4 10 cbo na 50 100 1 10 2 10 3 10 ?c max typ
2007-04-20 6 BCV26, bcv46 transition frequency f t = ? ( i c ) v ce = 5 v 10 ehp00294 bcv 26/46 03 10 ma 1 10 3 10 5 10 1 10 2 10 2 c t f mhz collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) 0 4 8 12 16 v 22 v cb ( v eb ) 0 2 4 6 8 10 12 pf 16 c cb ( c eb ) ccb ceb total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 50 100 150 200 250 300 mw 400 p tot permissible pulse load p totmax / p totdc = ? ( t p ) 10 ehp00292 bcv 26/46 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t
2007-04-20 7 BCV26, bcv46 package sot23 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel eh s bcw66 type code pin 1 0.8 0.9 0.9 1.3 0.8 1.2 0.25 m bc 1.9 -0.05 +0.1 0.4 0.1 2.9 0.95 c b 0...8? 0.2 a 0.1 max. 10? max. 0.08...0.15 1.3 0.1 10? max. m 2.4 0.15 0.1 1 a 0.15 min. 1) 1) lead width can be 0.6 max. in dambar area 12 3 3.15 4 2.65 2.13 0.9 8 0.2 1.15 pin 1 manufacturer 2005, june date code (ym)
2007-04-20 8 BCV26, bcv46 edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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